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AO3423 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO3423 is Pb-free (meets ROHS & Sony 259 specifications). AO3423L is a Green Product ordering option. AO3423 and AO3423L are electrically identical.
Features
VDS (V) = -20V (V GS = -10V) ID = -2 A RDS(ON) < 92m (VGS = -10V) RDS(ON) < 118m (VGS = -4.5V) RDS(ON) < 166m (VGS = -2.5V) ESD Rating: 2000V HBM
TO-236 (SOT-23) Top View G D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation A TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25C
F
Maximum -20 12 -2 -2 -8 1.4 0.9 -55 to 150
Units V V A
TA=70CF
ID IDM PD TJ, TSTG
W C
Symbol
A A
t 10s Steady-State Steady-State
RJA RJL
Typ 65 85 43
Max 90 125 60
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO3423
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2A Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-2A -1 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -0.7 -8 76 90 94 128 6.8 -0.78 -1.8 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 77 62 9.2 5.5 VGS=-4.5V, VDS=-10V, ID=-2A 0.8 1.9 5 VGS=-10V, VDS=-10V, RL=5, RGEN=3 IF=-2A, dI/dt=100A/s 6.7 28 13.5 9.8 2.7 12 13 6.6 620 92 108 118 166 -0.9 Min -20 -0.5 -2.5 1 10 -1.4 Typ Max Units V A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The maximum current rating is limited by bond-wires. Rev 0 : Mar 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 12 9 6 3 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 180 Normalized On-Resistance 160 140 RDS(ON) (m) 120 100 80 60 40 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 RDS(ON) (m) -IS (A) 140 120 100 80 60 1E-06 40 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C ID=-2A 1E+01 1E+00 125C 1E-01 1E-02 1E-03 1E-04 1E-05 25C VGS=-10V VGS=-4.5V VGS=-2.5V 1.6 ID=-2A, VGS=-4.5V 1.4 ID=-2A, VGS=-10V -2.0V VGS=-1.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 -VGS(Volts) Figure 2: Transfer Characteristics -2.5V -10.0V -8.0V -6.0V -3.0V -ID (A) 6 -ID(A) 4 2 125C 10 -4.0V -3.5V 8 VDS=-5V
25C
1.2
ID=-1A, VGS=-2.5V
1.0
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
AO3423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 1 2 3 4 5 6 -Qg (nC) Figure 7: Gate-Charge Characteristics ID=-2A Capacitance (pF) 600 800 Ciss
400
200 Crss 0 0
Coss
5
10
15
20
-VDS (Volts) Figure 8: Capacitance Characteristics
10.0 RDS(ON) limited -ID (Amps) 10s 100s 1ms 1.0 10ms 1s
TJ(Max)=150C TA=25C
40 TJ(Max)=150C TA=25C 30 Power (W)
20
10 10s DC 0.1s 0 0.001
0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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